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Visualization plays an important role in Epistemic Network Analysis (ENA), not only in graphical representation but also to facilitate interpretation and communicate research findings. However, there is no published description of the design features behind ENA network graphs. This paper provides this description from a graphic design perspective, focusing on the design principles that make ENA network graphs aesthetically pleasing and intuitive to understand. By reviewing graphic design principles and examining other extant network visualizations, we show how the current ENA network graphs highlight the most important network characteristics and facilitate sense-making. 

In this paper, we describe iPlan, a web-based software platform for constructing localized, reduced-form models of land-use impacts, enabling students, civic representatives, and others without specialized knowledge of land-use planning practices to explore and evaluate possible solutions to complex, multi-objective land-use problems in their own local contexts. 

Abstract Coulomb repulsion among conduction electrons in solids hinders their motion and leads to a rise in resistivity. A regime of electronic phase separation is expected at the first-order phase transition between a correlated metal and a paramagnetic Mott insulator, but remains unexplored experimentally as well as theoretically nearby T  = 0. We approach this issue by assessing the complex permittivity via dielectric spectroscopy, which provides vivid mapping of the Mott transition and deep insight into its microscopic nature. Our experiments utilizing both physical pressure and chemical substitution consistently reveal a strong enhancement of the quasi-static dielectric constant ε 1 when correlations are tuned through the critical value. All experimental trends are captured by dynamical mean-field theory of the single-band Hubbard model supplemented by percolation theory. Our findings suggest a similar ’dielectric catastrophe’ in many other correlated materials and explain previous observations that were assigned to multiferroicity or ferroelectricity. 

Tunnel Field Effect Transistors (TFETs) are known to be compromised by higher order processes that downgrade their performance compared to ballistic projections. Using a quasi-analytical model that extends the chemistry based Simmons equation to include finite temperature effects, potential variations and scattering, we exhibit that non-idealities like trap-assisted tunneling and Auger generation can explain the observed performance discrepancy. In particular, Auger generation is the dominant leakage mechanism in TFETs at low trap densities. Our studies suggest that possible ways of reducing Auger generation rate are reducing source carrier concentration and increasing the valence band transport effective mass of the source material. In this paper, we specifically investigate the impact of variations of these factors on device performance of staggered bandgap planar III-V heterojunction Tunnel FETs. 

Natural disasters, such as hurricanes, large wind and ice storms, typically require the repair of a large number of components in electricity distribution networks. Since power cannot be restored before the completion of repairs, optimally scheduling the available crews to minimize the cumulative duration of the customer interruptions reduces the harm done to the affected community. We have previously proposed approximation algorithms to schedule post-disaster repairs in electricity distribution networks with complete damage information [1]. In this paper, we extend our previous work to the case with incomplete damage information. We model this problem as scheduling a set of jobs with stochastic processing times on parallel identical machines in order to minimize the total weighted energization time. A linear programming (LP) based list scheduling policy is proposed and then analyzed in terms of theoretical performance. 

Strain-sensitive Ba x Sr 1− x TiO 3 perovskite systems are widely used because of their superior nonlinear dielectric behaviors. In this research, new heterostructures including paraelectric Ba 0.5 Sr 0.5 TiO 3 (BSTO) and ferroelectric BaTiO 3 (BTO) materials were epitaxially fabricated on flexible muscovite substrate. Through simple bending, the application of mechanical force can regulate the dielectric constant of BSTO from −77 to 36% and the channel current of BTO-based ferroelectric field effect transistor by two orders. The detailed mechanism was studied through the exploration of phase transition and determination of band structure. In addition, the phase-field simulations were implemented to provide theoretical support. This research opens a new avenue for mechanically controllable components based on high-quality oxide heteroepitaxy.